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Growth and Characterization of Epitaxial GaN Thin Films on 4H-SiC (11.0) Substrates

Published online by Cambridge University Press:  01 February 2011

Brian P. Wagner
Affiliation:
North Carolina State University, Raleigh, NC 27695
E. A. Preble
Affiliation:
Kyma Technologies, Inc., Raleigh, NC
Z. J. Reitmeier
Affiliation:
North Carolina State University, Raleigh, NC 27695
R. F. Davis
Affiliation:
North Carolina State University, Raleigh, NC 27695
D. N. Zakharov
Affiliation:
Lawrence Berkeley National Laboratory, MS 62–203, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, MS 62–203, Berkeley, CA 94720
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Abstract

GaN thin films were grown via metalorganic vapor phase epitaxy on a-plane 4H-SiC substrates on which had been deposited an AlN buffer layer. Atomic force microscopy images revealed that the microstructure of the AlN buffer layer and the subsequently deposited GaN had a highly oriented growth structure where parallel growth features propagated in the [1–1.0] direction. Scanning electron microscopy showed that the interfaces between the substrate, buffer layer, and epi-layer were continuous. Cracking was observed in GaN films having a thickness greater than 800 nm. Plan-view transmission electron microscopy analysis revealed stacking faults and threading dislocations with densities of ∼1.6×106cm-1 and ∼ 3.3×1010cm-1, respectively. X-ray diffraction confirmed that the GaN was deposited epitaxially in the same orientation as the substrate. The average on- and off-axis x-ray full-width half-maxima of the (11.0) and the (10.0) reflections were 948 arcsec and 5448 arcsec, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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Growth and Characterization of Epitaxial GaN Thin Films on 4H-SiC (11.0) Substrates
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