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GOI Impact of Cu, Ni and Al Atoms on the Wafer Surface Prior to RTP and Furnace Oxidations

Published online by Cambridge University Press:  10 February 2011

W. R. Aderhold ,
N. Shah ,
S. Bogen ,
A. Bauer  and
E. P. Burte
W. R. Aderhold
Affiliation:
AG Associates, Inc., 4425 Fortran Dr., San Jose, CA 95134
N. Shah
Affiliation:
AG Associates, Inc., 4425 Fortran Dr., San Jose, CA 95134
S. Bogen
Affiliation:
Fraunhofer Institut für Integrierte Schaltungen, Schottkystr. 10, 91058 Erlangen, Germany
A. Bauer
Affiliation:
Fraunhofer Institut für Integrierte Schaltungen, Schottkystr. 10, 91058 Erlangen, Germany
E. P. Burte
Affiliation:
Fraunhofer Institut für Integrierte Schaltungen, Schottkystr. 10, 91058 Erlangen, Germany
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Abstract

The effects of Al, Cu, and Ni on Gate Oxide Integrity (GOI) are evaluated in a critical process sequence relevant for current CMOS technology. The test process is designed to evaluate the GOI effect of these metals after multiple oxide growth and strip steps. This work compares oxide growth in a furnace and Rapid Thermal Processing (RTP). Wearout and E ramp measurements show that Ni contamination is detrimental for GOI only after multiple oxidations. Atomic Force Measurement (AFM) showed that precipitates (presumably NiSi2) form at the interface during the first oxidation. These precipitates are oxidized during the next oxidation and lead to oxide surface roughness and local Fowler Nordheim (FN) current enhancements. RTP results in a higher density of these defects as compared to furnace oxidation. Cu is fast-diffusing into the substrate and leads to defects only during the n+-poly process. Therefore, no influence of the oxide process variations on the Cu defect formation was found. In addition, no difference for furnace or RTP processes was observed. Cu precipitates that form at the poly/oxide interface lead to very pronounced FN current enhancements. As Al is built in the oxide structure, no electrode roughness occurs that leads to FN current enhancement. RTP grown oxides are less affected by Al contamination. Al can be removed by stripping the oxide, whereas Ni and Cu cannot.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 275
Copyright
Copyright © Materials Research Society 1996

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References

1. Bergholz, W., Zoth, G., Gotz, G., Saliov, A. (Solid State Phenomena, Vols. 19 & 20, 1991), p.109 Google Scholar
2. Honda, K., Nakanishi, T. (J.Appl.Phys. 75, 11, 1994), pp. 7394–7399 Google Scholar
3. Wendt, H., Cerva, H., Lehmann, V., Pamler, W. (J.Appl.Phys. 65 (6), 1989), pp 2402–2405 Google Scholar
4. Verhaverbeke, S., Mertens, P.W., Meuris, M., Heyns, M.M., Schnegg, A., Philipossian, A. (Tech. Conf., SEMICON Europe 92, Zürich, March 10–11, 1992, SEMI Europe, Brussels, 1992)Google Scholar
5. Hourai, M., Nakidomi, T., Oka, Y., Murakami, K., Sumita, S., Fujino, N., Shiraiwa, T. (Jpn. J.Appl.Phys., 27, 1988), p. L2361 Google Scholar
6. DiMaria, D.J., Ghez, R., Dong, D.W. (J.Appl.Phys. 51 (9), 1980), p. 4830 Google Scholar
7. DiMaria, D.J., Cartier, E., Arnold, D. (J.Appl.Phys., 73 (7),1993), p. 3367 Google Scholar
8. Bartur, M., Nicolet, M.-A. (J.Electrochem.Soc., Vol.131, No. 2, 1984), pp. 371–375 Google Scholar
9. Falster, R., (Solid State Phenomena, Vols. 6 & 7, 1989), pp. 13–20 Google Scholar
10. Osburn, C.M. in Silicides, Rapid Thermal Processing Science and Technology, Academic Press, New York, 1993, pp. 227–239 Google Scholar
11. Itoga, T., Kojima, H., Hiraiwa, A. (Extd.Abstr. “92 Int.Conf. on Sol id State Dev. and Mat., Tsukuba, 1992), pp. 434–436 Google Scholar