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Germanium Concentration Profiles Across Interfaces And Close To Dislocations In Cvd Si1−xGex-on-Si Junctions.

Published online by Cambridge University Press:  25 February 2011

J. Bruley ,
F. Ernst  and
K. Ljutovich
J. Bruley
Affiliation:
Max-Planck-lnstitut für Metallforschung, 7000 Stuttgart 1, Germany.
F. Ernst
Affiliation:
Max-Planck-lnstitut für Metallforschung, 7000 Stuttgart 1, Germany.
K. Ljutovich
Affiliation:
institute of Electronics, Academy of Sciences, Academgorodok, 700125, USSR
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Abstract

This work concerns a microanalytical study of CVD heteroepitaxial Si1–xGex/Si junctions with x ranging from 0.05 to 0.22. We observe that rather than being chemically abrupt, the width of the interface ranges between 200nm and 2μm with a band of misfit dislocations occupying the same region. Furthermore, the average separation of the dislocations is 2 or 3 times greater than predicted by b/δ considerations. Close scrutiny at individual dislocations within the interface region reveals a local deficit of several hundred Ge atoms per nanometer of dislocation line. It is proposed that the composition profile is rapidly spread by inter-diffusion along dislocations during the deposition process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 469
Copyright
Copyright © Materials Research Society 1992

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References

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