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The Ge/Pd/n-GaAs Ohmic Contact Interface Studied by Backside Raman Spectroscopy

Published online by Cambridge University Press:  25 February 2011

J. Watté
Affiliation:
Laboratorium voor Vaste-Stoffysika en Magnetisme, KULeuven, Celestijnenlaan, 200D, B-3001 Leuven, Belgium
R.E. Silverans
Affiliation:
Laboratorium voor Vaste-Stoffysika en Magnetisme, KULeuven, Celestijnenlaan, 200D, B-3001 Leuven, Belgium
H. Miinder
Affiliation:
Institut fur Schicht-und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
C.J. Palmstrøm
Affiliation:
Bellcore, Red Bank, New Jersey 07701-7040
L.T. Florez
Affiliation:
Bellcore, Red Bank, New Jersey 07701-7040
M. Van Hove
Affiliation:
Interuniversitair Micro-Electronica Centrum (IMEC), Kapeldreef, 75, B-3001 Leuven, Belgium
G. Borghs
Affiliation:
Interuniversitair Micro-Electronica Centrum (IMEC), Kapeldreef, 75, B-3001 Leuven, Belgium
K. Wuyts
Affiliation:
Interuniversitair Micro-Electronica Centrum (IMEC), Kapeldreef, 75, B-3001 Leuven, Belgium
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Abstract

The Ge/Pd/n-GaAs ohmic contact structure constitutes a near-ideal model system to test the applicability of the different metal/GaAs ohmic contact models. After annealing, an atomically flat interface between the GaAs substrate and a regrown Ge layer is obtained. A main point of discussion is whether the ohmic conduction across this junction either occurs by an enhanced Ge-doping of the GaAs (regrown) substrate surface layers (the doping model), and/or by a degenerate As-doping ot the Ge overlayer (the heterojunction hypothesis). In order to examine the applicability of both models, a Raman study of this system is undertaken. By a backside thinning procedure, a metallization/60 nm GaAs structure is preserved, allowing for a backside optical analysis of the regrown Ge/GaAs interface region.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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