Hostname: page-component-5c6d5d7d68-tdptf Total loading time: 0 Render date: 2024-08-16T19:18:46.790Z Has data issue: false hasContentIssue false
  • English
  • Français

Ge Surface Displacements Due to Low Energy Particles

Published online by Cambridge University Press:  25 February 2011

S. T. Picraux ,
K. M. Horn ,
E. Chason ,
J. Y. Tsao ,
P. Bedrossian ,
T. Klitsner  and
D. K. Brice
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
K. M. Horn
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
P. Bedrossian
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
T. Klitsner
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
D. K. Brice
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
Get access

Abstract

The production of surface defects by low energy 4He and Xe ions incident on very smooth Ge(001)2x1 surfaces is reported. Roughening at -50°C by 100-500 eV ions is measured by RHEED in real-time using the intensity of the out-of-phase specular beam. For He, the surface displacements per ion range from 0.05 to 0.3 and are comparable to our binary collision calculated surface vacancy production rate for a displacement threshold energy of 11 eV (3/4 of bulk value). For Xe, the displacement rate ranges from 2 to 10 (∼30x higher) and falls between the calculated total vacancy and total defect (vacancy + interstitial) production rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 235
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Picraux, S.T., Brice, D.K., Horn, K.M., Tsao, J.Y. and Chason, E., Nucl. Instr. & Meth. B48, 414 (1990).Google Scholar
2. Brice, D.K., Tsao, J.Y. and Picraux, S. T., Nucl. Instr. & Meth. B44, 68 (1989).CrossRefGoogle Scholar
3. Chen, Y. and MacKay, J.W., Phil. Mag. 19 357 (1969).Google Scholar
4. Bedrossian, P., Houston, J.E., Chason, E., Tsao, J.Y. and Picraux, S.T., Phys. Rev. Lett., 67, 124 (1991); P. Bedrossian and T. Klitsner, Phys. Rev. B, 44, (1991).Google Scholar
5. Picraux, S.T. and Stein, H.J., J. Appl. Phys. Vol. A5, 3784 (1974).CrossRefGoogle Scholar