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GaN P-N Structures Fabricated by Mg ION Implantation
Published online by Cambridge University Press: 15 February 2011
In this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2 × 1016 cm2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.53
- Copyright © Materials Research Society 1999