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GaN P-N Structures Fabricated by Mg ION Implantation

Published online by Cambridge University Press:  15 February 2011

E.V. Kalinina ,
V.A. Solov'ev ,
A.S. Zubrilov ,
V.A. Dmitriev  and
A.P. Kovarsky
E.V. Kalinina
Affiliation:
MSRCE, Howard University, Washington, D.C., USA; TDI, Inc., Gaitherburg, MD, USA.
V.A. Solov'ev
Affiliation:
MSRCE, Howard University, Washington, D.C., USA; TDI, Inc., Gaitherburg, MD, USA.
A.S. Zubrilov
Affiliation:
MSRCE, Howard University, Washington, D.C., USA; TDI, Inc., Gaitherburg, MD, USA.
V.A. Dmitriev
Affiliation:
MSRCE, Howard University, Washington, D.C., USA; TDI, Inc., Gaitherburg, MD, USA.
A.P. Kovarsky
Affiliation:
Mekhanobr Analyt Institute, St. Petersburg, Russia
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Abstract

In this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2 × 1016 cm2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.53
Copyright
Copyright © Materials Research Society 1999

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