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A Fully Self-Aligned Amorphous Silicon Tft Technology for Large Area Image Sensors and Active-Matrix Displays

Published online by Cambridge University Press:  10 February 2011

M J Powell
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RHI 5HA, UK
C Glasse
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RHI 5HA, UK
J E Curran
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RHI 5HA, UK
J R Hughes
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RHI 5HA, UK
I D French
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RHI 5HA, UK
B F Martin
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RHI 5HA, UK
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Abstract

We have developed a fully self-aligned amorphous silicon TFT technology, which is suitable for large area image sensors and active matrix displays. Self-alignment is achieved by defining the top nitride by back exposure and then forming source and drain contacts by ionimplantation and silicidation. We incorporate a low resistance gate metallisation process, by using Al metal, capped by Cr. We have compared the process of forming the silicide after the ion-implantation step, with a new process of forming the silicide first and then implanting through the formed silicide. We find a significant advantage to the latter method, where we can achieve a higher doping level and reduced contact resistance. We have therefore optimised our process based on this method. Transistor characteristics as a function of channel length for both methods show the improved contact resistance, obtained with the latter method. We obtain field effect mobilities of 0.7cm2V−1s−1, measured in the saturated region, for a channel length of 8μm.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

[1] Powell, M J, Chapman, J A, Knapp, A G, French, I D, Hughes, J R, Pearson, A D, Edwards, M J, Ford, R A, Hemings, M C, Hill, O F, Nicholls, D H and Wright, N K, Proceedings of SID 29 227 (1988)Google Scholar
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