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Fractal Growth of Clusters and Pores During Annealing of Aluminum Thin Films Deposited on Silica.

Published online by Cambridge University Press:  10 February 2011

Vincent Fleury ,
Lazlo Balazs  and
Franck Duclos
Vincent Fleury
Affiliation:
Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, Palaiseau, France.
Lazlo Balazs
Affiliation:
Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, Palaiseau, France.
Franck Duclos
Affiliation:
Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, Palaiseau, France.
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Abstract

Annealing of an Al thin-film on SiO2 at temperatures in the range 400-660°C leads to a chemical reaction (oxidation of Al and reduction of Si) whih proceeds via irreversible growth of 2-D aggregates which belong to a class of clusters first described in MBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 407: Symposium M – Disordered Materials and Interfaces-Fractals, structure and Dynamics , 1995 , 287
Copyright
Copyright © Materials Research Society 1996

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References

References and Notes

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