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The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

Published online by Cambridge University Press:  01 February 2011

Sungjin Hong
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
Seob Lee
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
Yeonkyu Ko
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
Jaegab Lee
Affiliation:
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
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Abstract

The annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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