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Formation of Double Layered SOI With Controlled Crystal Orientation

Published online by Cambridge University Press:  28 February 2011

Toshiaki Miyajima
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto, Tenri, Nara 632, JAPAN
Hideyuki Tsuji
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto, Tenri, Nara 632, JAPAN
Masashi Maekawa
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto, Tenri, Nara 632, JAPAN
Masayoshi Koba
Affiliation:
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto, Tenri, Nara 632, JAPAN
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Abstract

For the crystal orientation control of multi-layered SOI (Silicon on Insulator) by the laser recrystallization technology, the shape and size of seeds were investigated. By utilizing dot seeds less than 3μm square instead of a line seed, the crystal orientation control of a SOI layer was successfully realized without causing evaporation of silicon. Moreover, the dot seed method enabled us to control the crystal orientation of multi-layered SOI by virtue of small heat flow through seed regions.

In the mean time, it was proved that the SOI crystal orientation gradually rotated as the crystal propagated away from the seeds and that the degree of rotation in the second SOI layer was smaller than that in the first one.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

1 Izumi, K., Doken, M. and Ariyoshi, H., Electron. Lett., 14, 593 (1978)CrossRefGoogle Scholar
2 Fan, John C.C., Geis, M.W. and Tsaur, Bor-Yeu, Appl. Phys. Lett., 38 (5) 365 (1981)Google Scholar
3 Colinge, J.P., Demoulin, E., Bensahel, D. and Auvert, G., Appl. Phys. Lett., 41 (4) 346 (1982)Google Scholar
4 Horita, S. and Ishiwara, H., J. Appl. Phys., 61 (3) 1006 (1987)Google Scholar
5 Kakimoto, S., Kudo, J., Koba, M. and Awane, K., Japan. J. Appl. Phys., 26 (6) L899 (1987)Google Scholar
6 Ohtake, K., Shirakawa, K., Koba, M., Awane, K., Ohta, Y., Azuma, D. and Miyata, S., Technical Digest, 1986, IEEE IEDM p.148 Google Scholar
7 Yamazaki, K., Yoneda, M., Ogawa, S., Ueda, M., Akiyama, S. and Terui, Y., Technical Digest, 1986, IEEE IEDM, p435 Google Scholar
8 Inoue, Y., Sugahara, K., Kusunoki, S., Nakaya, M., Nishimura, T., Horiba, Y., Akasaka, Y. and Nakata, H., IEEE Transactions on Electron Device Letters, EDL–7 (5) 327 (1986)CrossRefGoogle Scholar
9 Shirakawa, K., Maekawa, M., Yamazaki, O., Tsuji, H. and Koba, M., Extended Abstracts of the 19th Conference on SSDM, p.175 (1987)Google Scholar
10 Maekawa, M., Proceedings of Fifth Symposium on Future Electron Devices, p.215 (1986)Google Scholar
11 Mitsuhashi, K., Shiozaki, K., Ohtake, K., Koba, M. and Awane, K., Proceedings of the First International Symposium on ULSI Science and Technology, p.557 (1987)Google Scholar
12 Drowley, C.I., Zorabedian, P. and Kamins, T.I., MRS Symposia Proceedings, 23, p.465 (1984)Google Scholar