Hostname: page-component-84b7d79bbc-2l2gl Total loading time: 0 Render date: 2024-07-29T03:43:26.063Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of a Buried Soft Layer in Sic for ”Compliant Substrate” by Ion Implantation

Published online by Cambridge University Press:  03 September 2012

M. Lioubtchenko ,
J. Hunn ,
A. Suvkhanov ,
N. Parikh  and
D. Bray
M. Lioubtchenko
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
J. Hunn
Affiliation:
Division of Metals and Ceramics, Oak Ridge National Lab, Oak Ridge, TN 37831–6376
A. Suvkhanov
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
N. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
D. Bray
Affiliation:
Department of Materials Science and Enginering, North Carolina State University, Raleigh, NC 27695–7907
Get access

Abstract

Radiation damage and its removal have been studied in ion implanted 6H-SiC by Rutherford backscattering/Channeling (RBS). We have implanted Ga and Ti at 800°C using doses of 1 × 1016 to 2× 1017 cm−2. The implanted samples have been subsequently annealed at 1050°C, and then at 1400°C for 30 sec to study the removal of damage produced during implantation. The energies of implanted species have been chosen to obtain 20 – 40 nmn projected ranges to form a buried metallic or graphitic layer. No significant damage removal has been observed after 1050°C anneal, however 1400°C annealing of 40 and 120 keV Ga implanted samples (fluence 2 × 1016 cm−2) resulted in significantly less damage as can be observed from RBS/Channeling data. In the case of Ti implanted samples annealing led to an appreciable increase in the channeled backscattering yield, which might be due to the formation of some new phase (e.g. TiSi or TiSi2 ) and may be related to distortions of the existing lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 265
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kuang, J.B., Chen, Y.K., Sivco, D., Cho, A.Y., and Eastman, L., Appl. Phys. Lett. 57, p. 1784 (1990).Google Scholar
2. Zah, C.E., Bhat, R., Cheung, K.W., Andreadakis, N.C., Fauire, C.J., Menocal, S.G., Yablonovitch, E., Hwang, D.M., Koza, M., Gmitter, T.J., and Lee, T.P., Appl. Phys. Lett. 57, p.1608 (1990).Google Scholar
3. Chua, C.L., Hsu, W.Y., Lin, C.H., Christenson, G., and Lo, Y.H., Appl. Phys. Lett. 64, p. 3640 (1994).Google Scholar
4. Burdel', K. K., Suvorov, A.V., and Chechenin, N.G., Soy. Phys. Solid State, 32, p. 975 (1990).Google Scholar
5. Bohn, H., Williams, J.M., McHargue, C.J., and Begun, G.M., J. Mater. Res. 2, p. 107 (1987).Google Scholar
6. Murarka, S.P., Silicides for VLSI Applications, Academic Press, Inc., New York, 1983, pp. 100–102.Google Scholar