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Formation Energies of Point Defects in Copper Indium Diselenide Using ab initio Methods

Published online by Cambridge University Press:  01 February 2011

C. Domain
Affiliation:
EDF-R&D, Département MMC, Les Renardières, 77250 Moret sur Loing, France
J.M. Raulot
Affiliation:
EDF-R&D, Département MMC, Les Renardières, 77250 Moret sur Loing, France
S. Laribi
Affiliation:
EDF-R&D, Département MMC, Les Renardières, 77250 Moret sur Loing, France
S. Taunier
Affiliation:
EDF-R&D, CISEL project, Quai Walter, 78401 Chatou Cedex, France
J.F. Guillemoles
Affiliation:
ENSCP, LECA, UMR 7575, 11 rue Pierre et Marie Curie, 75005 Paris, France
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Abstract

The opto-electronic properties of CuInSe2 and related compounds depend on their defect chemistry in a way that is far from being understood and in which ab initio calculations could help by providing new insights as shown previously. Ab initio calculations of energy and electronic structure of various intrinsic (including defect pairs) and extrinsic (including potential dopants such as Zn) point defects have been performed in the chalcopyrite semiconductors CuInSe2, some of them being computed for the first time by advanced ab initio techniques. The method used is based on the density functional theory within the framework of pseudo-potentials and plane waves basis set. The results are discussed in view of the existing data, models and calculations.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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Formation Energies of Point Defects in Copper Indium Diselenide Using ab initio Methods
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