Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-25T10:15:14.709Z Has data issue: false hasContentIssue false

Film Formation Behavior of the Endohedral Metallofullerene DY@C82

Published online by Cambridge University Press:  10 February 2011

Houjin Huang
Affiliation:
Department of Chemistry, The Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong
Shihe Yang
Affiliation:
Department of Chemistry, The Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong
Get access

Abstract

The Langmuir-Blodgett (LB) film formation behavior of the endohedral metallofullerene Dy@C82 was studied at the air/water and Ar/water interfaces. The LB film constructed at the Ar/water interface (2-4 layers) was found to be thinner and more uniform than at the air/water interface (4-6 layers). Particulate aggregates were observed in the LB films, which contrasts the extended wire networks formed by direct evaporation of the metallofullerene solution on a quartz plate. The UV-Vis absorption peaks are blue-shifted for the LB film deposited in air, which is attributed to the partial oxidation of the metallofullerene balls. They are red-shifted, however, for the LB film at the Ar/water interface presumably due to the interaction between the pristine metallofullerenes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Obeng, Y.S., Bard, A.J., J. Am. Chem. Soc. 113, 6279 (1991).Google Scholar
2. Nakamura, T., Tachibana, H., Yumura, M., Matsumoto, M., Azumi, R., Tanaka, M., Kawabata, Y, Langmuir 8, 4 (1992).Google Scholar
3. Back, R., Lennox, R.B., J. Phys. Chem. 96, 8149 (1992).Google Scholar
4. Milliken, J., Domonguez, D.D., Nelson, H.H., Barger, W.R., Chem. Mater. 4, 252 (1992).Google Scholar
5. Guo, J., Xu, Y., Li, Y., Yang, C., Yao, Y., Zhu, D., Bai, C., Chem. Phys. Lett. 195, 625 (1992).Google Scholar
6. Bulhoes, L.O., Obeng, Y.S., Bard, A.J., Chem. Mater. 5, 110 (1993).Google Scholar
7. Tomioka, Y., Ishibashi, M., Kajiyama, H., Taniguchi, Y., Langmuir 9, 32 (1993).Google Scholar
8. Zhou, D., Gan, L., Luo, C., Tan, H., Huang, C., Yao, G., Zhao, X., Liu, Z., Xia, X., Zhang, B., J. Phys. Chem. 100 (1996) 3150; D. Zhou, L. Gan, C. Luo, C. Huang, Y Wu, Solid State Commun. 102, 891 (1997).Google Scholar
9. Guldi, D.M., Tian, Y., Fendler, J.F., Hungerbuhler, H., Asmus, K.D., J. Phys. Chem. 100, 2753 (1996).Google Scholar
10. Murakami, H., Watanabe, Y., Nakashima, N., J. Am. Chem. Soc. 118, 4484 (1996); T. Nakanishi, H. Murakami, N. Nakashima, Chem. Lett. 12, 1219 (1998).Google Scholar
11. Bethune, D.S., Johnson, R.D., Salem, J.R., Vries, M.S. de, Yannoni, C.S., Nature 366, 123 (1993).Google Scholar
12. Heflin, J.R., Marciu, D., Figura, C., Wang, S., Burbank, P., Stevenson, S., Dorn, H.C., Appl. Phys. Lett. 72, 2788 (1998).Google Scholar
13. Gu, G., Huang, H.J., Yang, S.H., Yu, P., Fu, J.S., Wong, G.K.L., Wan, X.G., Dong, J.M., Du, Y.W., Chem. Phys. Lett. 289, 167 (1998).Google Scholar
14. Cagle, D.W., Kennel, S.J., Mirzadeh, S., Alford, J.M., Wilson, L.J., Proc. Nat. Acad. Sci. Uni. Sta. Am. 96, 5182 (1999).Google Scholar
15. Ding, J.Q., Weng, L.T., Yang, S.H., J. Phys. Chem. 100, 11120 (1996); J.Q. Ding, S.H. Yang, Angew. Chem. Int. Ed. Engl. 35, 2234 (1996).Google Scholar
16. Lin, N., Huang, H.J., Yang, S.H., Cue, N., J. Phys. Chem. A 102, 4411 (1998); Phys. Rev. B-Cond. Matt. 58, 2126 (1998).Google Scholar
17. Huang, H. J., Yang, S. H., J. Organomet. Chem. in press (1999).Google Scholar
18. Ding, J.Q., Yang, S.H., Chem. Mater. 8, 2824 (1996).Google Scholar
19. Huang, H.J., Yang, S.H., J. Phys. Chem. B 102, 10196 (1998).Google Scholar
20. Huang, H.J., Yang, S.H., unpublished results (1999).Google Scholar
21. Sun, D.Y., Huang, H.J., Yang, S.H., Liu, Z.Y., and Liu, S.Y., Chem. Mater. 11, 1003 (1999).Google Scholar