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Film Deposition Process in Pulse Discharge CVD

Published online by Cambridge University Press:  21 February 2011

T. Yoshida ,
H. Fujisawa ,
T. Hokaya ,
Y. Ichikawa  and
H. Sakai
T. Yoshida
Affiliation:
Fuji Electric Corporate Research and Development, Ltd. Nagasaka 2–2–l, Yokosuka, Kanagawa 240–01, Japan
H. Fujisawa
Affiliation:
Fuji Electric Corporate Research and Development, Ltd. Nagasaka 2–2–l, Yokosuka, Kanagawa 240–01, Japan
T. Hokaya
Affiliation:
Fuji Electric Corporate Research and Development, Ltd. Nagasaka 2–2–l, Yokosuka, Kanagawa 240–01, Japan
Y. Ichikawa
Affiliation:
Fuji Electric Corporate Research and Development, Ltd. Nagasaka 2–2–l, Yokosuka, Kanagawa 240–01, Japan
H. Sakai
Affiliation:
Fuji Electric Corporate Research and Development, Ltd. Nagasaka 2–2–l, Yokosuka, Kanagawa 240–01, Japan
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Abstract

To understand the deposition process of pulse discharge (PD) CVD, we studied spatial distribution and decay of plasma parameters and those of SiH LIF signals. In addition, we studied film properties of a-SiC:H and a-SiGe:H deposited by the PD-CVD. It was found that the quality of p-type a-SiC:H films deposited by the PD-CVD from SiH4+CH4+B3 was better than those of conventional p-type a-SiC:H films. The p-type a-SiC:H films were applied to the p-layer of p-i-n a-Si solar cells, and a conversion efficiency of 12. 3% was obtained for a 1cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 655
Copyright
Copyright © Materials Research Society 1991

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References

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