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FIB-TEM Characterization of Locally Restricted Implantation Damage

Published online by Cambridge University Press:  11 February 2011

Heinz D. Wanzenboeck
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse / E362; A-1040 Vienna, AUSTRIA
Stefan Harasek
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse / E362; A-1040 Vienna, AUSTRIA
Wolfgang Brezna
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse / E362; A-1040 Vienna, AUSTRIA
Alois Lugstein
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse / E362; A-1040 Vienna, AUSTRIA
Helmut Langfischer
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse / E362; A-1040 Vienna, AUSTRIA
Emmerich Bertagnolli
Affiliation:
Vienna University of Technology, Institute for Solid State Electronics, Floragasse / E362; A-1040 Vienna, AUSTRIA
Ulf Grabner
Affiliation:
Vienna University of Technology, Institute for Solid State Physics, Wiedner Hauptstrasse, A-1040 Vienna, AUSTRIA
Gerold Hammer
Affiliation:
Vienna University of Technology, Institute for Solid State Physics, Wiedner Hauptstrasse, A-1040 Vienna, AUSTRIA
Peter Pongratz
Affiliation:
Vienna University of Technology, Institute for Solid State Physics, Wiedner Hauptstrasse, A-1040 Vienna, AUSTRIA
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Abstract

Imaging critical features by using transmission electron microscopy (TEM) or scanning electron microscopy (SEM) provides a versatile approach for nanostructure characterization. The combination of focused ion beam (FIB) technology for exposing defective sites beneath the surface is shown. Reliability testing and defect analysis by localized characterization of multilayered structures is demonstrated. TEM-imaging of a transistor gate with a locally confined radiation damage demonstrates target preparation by FIB yielding high-resolution TEM samples. The TEM imaging requires a longer sample preparation but provides high image quality (TEM). Investigation of materials previously processed with FIB revealed amorphization damage by the high energetic Ga-ion beam. This damage layer with a thickness in the range of 50 to 100 nm was confirmed in simulation. This disadvantageous damage by amorphization originating from FIB preparation of the cross-section could be removed by soft sputtering with a 250 V Ar+ ion beam. This combined method using FIB for microsample preparation and TEM for imaging and analysis was proven to be a powerful tool the exploitation of nanostructured devices and for defect analysis on a highly localized scale.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Muhle, U., Wiesner, A., and Schray, S.; Microelectronics Reliability 38(6), 895 (1998)Google Scholar
Altmann, F. and Katzer, D.; Thin Solid Films 343/344, 609 (1999)Google Scholar
3. Kuroda, K., et al.; Thin Solid Films 319(1), 92 (1998)Google Scholar
4. Tanaka, M., Furuya, K., and Saito, T.; Nucl. Instr. Meth. Phys. Res. B 127/128, 98 (1997)Google Scholar
5. Leslie, A.J., et al.; ISTFA ′95. 21st International Symposium for Testing and Failure Analysis 1995, 367 (1995)Google Scholar
6. Chu, C.H., et al.; J. Vac. Sci. Technol. B 9(6), 3451 (1991)Google Scholar
7. Teichert, J., et al.; Appl. Phys. A 71(2), 175 (2000)Google Scholar
8. Bicais-Lepinay, N., Andre, F., Pantel, R., Jullian, S., Margain, A., Kwakman, L. F.; Microelectronics Reliability. 42(9–11), 1747 (2002)Google Scholar
9. Lomness, J. K., Giannuzzi, L. A., Hampton, M. D.; Microscopy and Microanalysis 7(5) 418 (2001)Google Scholar
10. Tanaka, M., Furuya, K., Saito, T., Microscopy and Microanalysis 4(3), 207 (1998)Google Scholar
11. Menzel, R., Gartner, K., Wesch, W., Hobert, H., J. Appl. Phys. 88(10), 5658 (2000)Google Scholar
12. Ryangsu, K., Aoki, T., Hirose, T., Furuta, Y., Hayashi, S., Shano, T., Taniguchi, K.; IEDM 2000 Technical Digest IEDM-Cat.-No.00CH37138, 523 (2000)Google Scholar
13. Noda, T., Odanaka, S., Umimoto, H., J. Appl. Phys. 88(9), 4980, (2000)Google Scholar