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Far-infrared dielectric function and phonon modes of spontaneously ordered (AlxGa1-x)0.52In0.48P

Published online by Cambridge University Press:  11 February 2011

Tino Hofmann
Affiliation:
Solid State Physics Group, Faculty of Physics and Geosciences, University of Leipzig, GERMANY
Volker Gottschalch
Affiliation:
Faculty of Chemistry and Mineralogy, University of Leipzig, GERMANY
Mathias Schubert
Affiliation:
Solid State Physics Group, Faculty of Physics and Geosciences, University of Leipzig, GERMANY
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Abstract

We present a far-infrared spectroscopic ellipsometry study of the phonon properties of partially CuPtB -ordered (Al x Ga1-x )0.52In0.48P with x =0, 0.32, 0.7, and 1.0 and degrees of ordering η = 0 … 0.63, determined from generalized ellipsometry measurement of the near-band-gap order birefringence. An anharmonic oscillator approach is used to model the ordinary and extraordinary dielectric functions and determine the infrared-active longitudinal and transversal phonon modes of the thin film samples. Besides the isotropic GaP-, InP- and AlP-like phonon modes, we observe alloy-induced modes with low polarity for η ∼ 0. The evolution of lattice like and alloy-induced modes with increasing η is reviewed for Ga0.52In0.48P. With increasing η all phonon modes split in E- and A 1 -type vibrations with polarization perpendicular and parallel to the sublattice ordering direction, respectively, and the mode frequencies shift continuously. Our observations extend recently published phonon frequencies from experiment and theory for CuPt-ordered Ga0.52In0.48P, which are compared and discussed. The phonon modes of highly ordered (Al x Ga1-x )0.52In0.48P, η ∼ 0.6, are compared to the modes observed in the highly disordered quaternary solid solution. We propose the far-infrared dielectric anisotropy as a sensitive measure for sublattice ordering in multinary III-V alloys.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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Far-infrared dielectric function and phonon modes of spontaneously ordered (AlxGa1-x)0.52In0.48P
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