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Fabrication of side-illuminated p-i-n Photodiode with waveguide layers

Published online by Cambridge University Press:  01 February 2011

Byungok Jeon ,
Seungkee Yang ,
Hwayoung Kang  and
Doyoung Rhee
Byungok Jeon
Affiliation:
Telecommunication R&D center, Samsung Electronics Co., LTD 416, Maetan-3Dong, Paldal-Gu, Suwon City, Gyeunggi-Do, KOREATEL:+82–31–279–5732, FAX:+82–31–279–5639, E-mail: ikarie@samsung.com
Seungkee Yang
Affiliation:
Telecommunication R&D center, Samsung Electronics Co., LTD 416, Maetan-3Dong, Paldal-Gu, Suwon City, Gyeunggi-Do, KOREATEL:+82–31–279–5732, FAX:+82–31–279–5639, E-mail: ikarie@samsung.com
Hwayoung Kang
Affiliation:
Telecommunication R&D center, Samsung Electronics Co., LTD 416, Maetan-3Dong, Paldal-Gu, Suwon City, Gyeunggi-Do, KOREATEL:+82–31–279–5732, FAX:+82–31–279–5639, E-mail: ikarie@samsung.com
Doyoung Rhee
Affiliation:
Telecommunication R&D center, Samsung Electronics Co., LTD 416, Maetan-3Dong, Paldal-Gu, Suwon City, Gyeunggi-Do, KOREATEL:+82–31–279–5732, FAX:+82–31–279–5639, E-mail: ikarie@samsung.com
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Abstract

We present the fabrication of side-illuminated p-i-n photodiode. This is suitable for passive integration on the planar lightwave circuit (PLC), which is able to make the low-cost packages. Epitaxial structures have two main layers, diode layer and waveguide layer. It was determined by beam propagation method (BPM) simulation. To get a high responsivity and reliability, each layer must be etched. The alignment tolerances were tested. We carried out some experiments on various methods and several devices were satisfactory for the optical communication system at 1.3- and 1.55 micrometer wavelengths.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z5.4
Copyright
Copyright © Materials Research Society 2004

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References

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