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Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  11 February 2011

Yasufumi Fujiwara
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
Atsushi Koizumi
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
Kentaro Inoue
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
Akira Urakami
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
Taketoshi Yoshikane
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
Yoshikazu Takeda
Affiliation:
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464–8603, Japan
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Abstract

Room-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). Under forward bias, characteristic emission due to a luminescence center consisting of Er coordinated by O and As was clearly observed at room temperature, while the Er-related EL was undetectable under reverse bias. At lower current densities, the EL intensity increased linearly with the current density. Subsequently, the intensity exhibited a tendency to saturate at higher current densities. By analyzing the behavior with a fitting according to rate equations, the excitation cross section of Er ions due to current injection was determined to be approximately 10-15 cm2, which is by five orders in magnitude larger than that for optical excitation in Er-doped fiber amplifiers (10-20∼10-21 cm2).

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. For example, Fujiwara, Y., Ofuchi, H., Tabuchi, M., and Takeda, Y., “Growth condition dependences of optical properties of Er in InP and local structures (Chapter 7)”, InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices, Vol. 9, edited by Manasreh, M. O. (Gordon and Breach Science Pub., The Netherlands, 2000) pp. 251311.Google Scholar
2. Takahei, K. and Taguchi, A., J. Appl. Phys. 74, 19791982 (1993).Google Scholar
3. Takahei, K., Taguchi, A., Horikoshi, Y., and Nakata, J., J. Appl. Phys. 76, 43324339 (1994).Google Scholar
4. Tabuchi, M., Ofuchi, H., Kubo, T., Takahei, K., and Takeda, Y., Mater. Sci. Form, 258–263, 15711576 (1997).Google Scholar
5. Fujiwara, Y., Kawamoto, T., Koide, T., and Takeda, Y., Phyica B 273–274, 770773 (1999).Google Scholar
6. Fujiwara, Y., Furuta, S., Makita, K., Ito, Y., Nonogaki, Y., and Takeda, Y., J. Cryst. Growth 146, 544548 (1995).Google Scholar
7. Franzo, G., Coffa, S., Priolo, F., and Spinella, C., J. Appl. Phys. 81, 27842793 (1997).Google Scholar
8. Priolo, F., Franzo, G., Coffa, S., and Carnera, A., Phys. Rev. B 57, 44434455 (1998).Google Scholar