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Excimer Laser Annealing Effect on MILC Polycrystalline Silicon Film
Published online by Cambridge University Press: 17 March 2011
XeCl excimer laser was irradiated on metal induced laterally crystallized (MILC) polycrystalline silicon (poly-Si) film in order to eliminate the intra-grain defects of MILC poly-Si film which incorporated 2 μm wide metal induced crystallized (MIC) poly-Si line pattern. On the irradiation of the laser beams, different melt and recrystallization phenomena were observed in the MILC and the MIC poly-Si region due to the Ni content difference in each film. The transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) measurements indicated that the melting temperature of the poly-Si film decreased as the Ni content increased. With the laser irradiation energy density of 370 mJ/cm2, 2 μm long defect-free poly-Si grain was successfully grown in the MILC poly-Si due to the melting temperature variation at the MILC-MIC poly-Si boundary.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D3.5.1
- Copyright © Materials Research Society 2001