Hostname: page-component-5d59c44645-mrcq8 Total loading time: 0 Render date: 2024-03-02T03:22:54.693Z Has data issue: false hasContentIssue false

Excimer Laser Annealing Effect on MILC Polycrystalline Silicon Film

Published online by Cambridge University Press:  17 March 2011

Kee-Chan Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
In-Hyuk Song
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, KOREA
Get access

Abstract

XeCl excimer laser was irradiated on metal induced laterally crystallized (MILC) polycrystalline silicon (poly-Si) film in order to eliminate the intra-grain defects of MILC poly-Si film which incorporated 2 μm wide metal induced crystallized (MIC) poly-Si line pattern. On the irradiation of the laser beams, different melt and recrystallization phenomena were observed in the MILC and the MIC poly-Si region due to the Ni content difference in each film. The transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) measurements indicated that the melting temperature of the poly-Si film decreased as the Ni content increased. With the laser irradiation energy density of 370 mJ/cm2, 2 μm long defect-free poly-Si grain was successfully grown in the MILC poly-Si due to the melting temperature variation at the MILC-MIC poly-Si boundary.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jin, Z., Bhat, G.A., Yeung, M., Kwok, H.S. and Wong, M., J. Appl. Phys., 84, 194 (1998).Google Scholar
2. Lee, S.W. and Joo, S.K., IEEE Electron Device Lett. 17, 160 (1996).Google Scholar
3. Wong, M., Jin, Z., Bhat, G.A., Kwok, H.S. et al. , IEEE Trans. Elec. Dev., 47, 1061 (2000).Google Scholar
4. Crowder, M.A., Carey, P.G., Smith, P.M., Im, J.S., et al. , IEEE Elec. Dev. Lett. 19. 306 (1998).Google Scholar
5. Oh, C.H. and Matsumura, M., IEEE Elec. Dev. Lett. 22, 20 (2001).Google Scholar
6. Im, J., Kim, H.J. and Thompson, M.O., Appl. Phys. Lett. 63, 1969 (1993).Google Scholar