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Evidence of a Radiation-Induced Defect Level in n-Type InSb

Published online by Cambridge University Press:  26 February 2011

S. D. Kouimtzi
S. D. Kouimtzi*
Affiliation:
University of Thessaloniki, Thessaloniki, Greece. J.J. Thomson Physical Laboratory, University of Reading, Reading, U.K.
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Abstract

Capacitance bridge measurements of loss on irradiated n-type InSb specimens at low temperatures are reported. A peak in A.C. conductance at ?55K is seen after irradiation and it is attributed to a radiation induced level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 487
Copyright
Copyright © Materials Research Society 1988

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References

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