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Evaluation of Semiconductor Lattice Damage Using a Newly-Developed Photodisplacement Laser Probe

Published online by Cambridge University Press:  25 February 2011

S. Sumie ,
H. Takamatsu ,
H. Tsunaki ,
Y. Nishimoto  and
Y Nakai
S. Sumie
Affiliation:
Kobe Steel, Ltd., Leo Corporation, 1-5-5 Takatsukadai Nishi-ku, Kobe, Hyogo 651-22, Japan
H. Takamatsu
Affiliation:
Kobe Steel, Ltd., Leo Corporation, 1-5-5 Takatsukadai Nishi-ku, Kobe, Hyogo 651-22, Japan
H. Tsunaki
Affiliation:
Kobe Steel, Ltd., Leo Corporation, 1-5-5 Takatsukadai Nishi-ku, Kobe, Hyogo 651-22, Japan
Y. Nishimoto
Affiliation:
Kobe Steel, Ltd., Leo Corporation, 1-5-5 Takatsukadai Nishi-ku, Kobe, Hyogo 651-22, Japan
Y Nakai
Affiliation:
Leo Corporation, 1-5-5 Takatsukadai Nishi-ku, Kobe, Hyogo 651-22, Japan
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Abstract

A highly sensitive laser probe for photo-acoustic displacement(PAD) has been developed and applied to the monitoring of low-level lattice damage in semiconductors. Since a photodisplacement laser probe with the sensitivity of 0.1 picometers is employed in this measurement, lower density damage for instance, formed by 50 keV B+ implantation with a dose of 5X109 ions/cm2 can be detected. Correlation of the PAD with damage density was obtained in B+ implantation. Therefore, quantitative damage density can be obtained from the relation for lightly damaged layers, such as formed by chemomechanical polishing and by electron cyclotron resonance plasma etching. This technique is useful-for monitoring of low damage density surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 241
Copyright
Copyright © Materials Research Society 1992

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