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Etching Properties of Hydrogenated Amorphous Silicon
Published online by Cambridge University Press: 21 February 2011
Abstract
We have studied wet-chemical and dry etching properties of doped and undoped hydrogenated amorphous silicon (a-Si:H) films with bonded hydrogen content varying from 0 to 20 at.%. Etching processes studied include (1) wet-chemical etching using solutions of KOH, isopropyl alcohol (IPA), and H2O, (2) hydrogen plasma etching, and (3) XeF2 vapor etching.
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- Copyright © Materials Research Society 1991
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