Skip to main content Accessibility help
×
Home
Hostname: page-component-7f7b94f6bd-8mfwn Total loading time: 0.372 Render date: 2022-06-29T04:28:03.666Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true } hasContentIssue true

Erbium Doping of Silicon and Silicon Carbide Using Ion Beam Induced Epitaxial Crystallization

Published online by Cambridge University Press:  21 February 2011

P. Boucaud
Affiliation:
IEF, Université Paris XI, Bat 220, 91405 Orsay, FRANCE
F.-H. Julien
Affiliation:
IEF, Université Paris XI, Bat 220, 91405 Orsay, FRANCE
J.-M. Lourtioz
Affiliation:
IEF, Université Paris XI, Bat 220, 91405 Orsay, FRANCE
H. Bernas
Affiliation:
CSNSM, Université Paris XI, Bat 108, 91405 Orsay, FRANCE
C. Clerc
Affiliation:
CSNSM, Université Paris XI, Bat 108, 91405 Orsay, FRANCE
J. Chaumont
Affiliation:
CSNSM, Université Paris XI, Bat 108, 91405 Orsay, FRANCE
S. Bodnar
Affiliation:
France Telecom CNET-CNS, 38243 Meylan, FRANCE
J.-L. Regolini
Affiliation:
France Telecom CNET-CNS, 38243 Meylan, FRANCE
X. W. Lin
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
Get access

Abstract

Erbium doping of silicon and silicon carbide using implantation followed by ion beam induced epitaxial crystallization (IBIEC) is investigated. The implanted concentration of Er was 1.4 at% in both cases. In Si(100), Rutherford backscattering/channeling revealed that about 40% of the Er atoms evolved upon rapid thermal annealing from an undetermined position (room temperature) to an interstitial tetrahedral position (650°C) and finally to a substitutional position (950°C). The remaining Er atoms were presumably trapped in the small precipitates visible in high resolution transmission electron microscopy. The photoluminescence at 1.54 μπι of Er3+ is enhanced with annealing and persists up to room temperature after a 950 °C 1 min anneal. The high concentration of optically active Er atoms is illustrated by the lack of saturation of the photoluminescence at high pumping excitation intensity. Erbium was also implanted into cubic silicon carbide films prepared by chemical vapor deposition on Si at 900 °C. Both solid phase epitaxy (SPE) and IBIEC were performed. After a 950°C anneal, the low temperature photoluminescence at 1.54 μιη after IBIEC was five times higher in SiC than in silicon. The difference in photoluminescence linewidth between IBIEC (broad lines) and SPE (sharp lines) is explained in terms of interactions between optically active erbium atoms.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ennen, H., Schneider, J., Pomrenke, G., Axmann, A., Appl. Phys. Lett. 43,943 (1983).CrossRefGoogle Scholar
2 Michel, J., Benton, J. L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y.-H., Poate, J. M., Kimerling, L. C., J. Appl. Phys. 70,2672 (1991).CrossRefGoogle Scholar
3 Coffa, S., Franzo, G., Priolo, F., Polman, A., Serna, R., Phys. Rev. B 49,16313 (1994).CrossRefGoogle Scholar
4 Polman, A., Custer, J. S., Snoeks, E., van den Hoven, G. N., Appl. Phys. Lett. 62,507 (1993).CrossRefGoogle Scholar
5 Golecki, I., Reidinger, F., J. Marti, Appl. Phys. Lett. 60,1703 (1992).CrossRefGoogle Scholar
6 Bernas, H., Clerc, C., Chaumont, J., Boucaud, P., Francis, C., Julien, F.-H., Lourtioz, J.-M., Lin, X. W., unpublished.Google Scholar
7 Weber, J., Schmid, W., Sauer, R., Phys. Rev. B 21,2401 (1980).CrossRefGoogle Scholar
8 Choyke, W. J., Devaty, R. P., Clemen, L. L., Yoganathan, M., Pensl, G., Hässler, Ch., Appl. Phys. Lett. 65,1668 (1994).CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Erbium Doping of Silicon and Silicon Carbide Using Ion Beam Induced Epitaxial Crystallization
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Erbium Doping of Silicon and Silicon Carbide Using Ion Beam Induced Epitaxial Crystallization
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Erbium Doping of Silicon and Silicon Carbide Using Ion Beam Induced Epitaxial Crystallization
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *