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Epitaxy-Like Growth of Polycrystalline Silicon on the Seed Crystallites Grown on Glass

Published online by Cambridge University Press:  15 February 2011

Y. Miyamoto ,
A. Miida  and
I. Shimizu
Y. Miyamoto
Affiliation:
The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama, Japan 226
A. Miida
Affiliation:
The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama, Japan 226
I. Shimizu
Affiliation:
The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama, Japan 226
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Abstract

Polycrystalline silicon thin films were grown on glass by two-steps, i.e., deposition of seeds on glass (1) and growth epitaxy-like on the seeds (2). For the growth of seeds, the surface reaction was intentionally enhanced by impingment of atomic hydrogen at rather high temperature (450 °C). Strongly textured polycrystalline Si exhibiting (220) preferential orientation was grown epitaxy-like on the seeds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 995
Copyright
Copyright © Materials Research Society 1997

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References

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