Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-19T00:21:50.706Z Has data issue: false hasContentIssue false

Epitaxial Relationships of the a-Axis Oriented YBa2Cu3O7-x Thin Films on the PrBa2Cu3O7-xTx Buffered SrTiO3(100) by two Step PLD

Published online by Cambridge University Press:  15 February 2011

Gun Yong Sung
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O.Box 106, Taejeon, 305-600, REP. OF KOREA
Jeong Dae Suh
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O.Box 106, Taejeon, 305-600, REP. OF KOREA
Sahn Nahm
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O.Box 106, Taejeon, 305-600, REP. OF KOREA
Get access

Abstract

An a-axis oriented YBa2Cu3O7-x (YBCO) thin film exhibiting zero resistance at 83 K and critical current density of 7.9x103 A/cm2 at 62 K was obtained on an 180 nm - thick PrBa2Cu3 O7-xx(PBCO) buffered SrTiO3(100) substrate by two step pulsed laser deposition (PLD). The volume fraction of a-axis orientation and the crystallinity(Xmin) of the 150 nm-thick YBCO thin films were increased with increasing the thickness of PBCO buffer layer, which was varied friom 0 nm to 180 nm. It is concluded that the thickness of PBCO buffer layer is one of the important parameters to control the structural and superconducting properties of the a-axis oriented YBCO thin films using the PBCO buffer layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Eom, C.B., Marshall, A. F., Triscone, J. M., Wilkens, B., Laderman, S. S., and Geballe, T. H., Science 251, 780 (1991).CrossRefGoogle Scholar
2. Ramesh, R., Chang, C.C., Ravi, T.S., Hwang, D.M., Inam, A., Xi, X.X., Li, Q., Wu, X.D., and Venkatesan, T., Appl. Phys. Lett., 57, 1064 (1990).CrossRefGoogle Scholar
3. Linker, G., Xi, X.X., Meyer, O., Li, Q., and Geerk, J., Solid State Comm., 69, 249 (1989).Google Scholar
4. Hase, T., Takahashi, H., Izumi, H., Ohata, K., Suzuki, K., Morishita, T., and Tanaka, S., J. Cry. Growth, 115, 788 (1991).Google Scholar
5. Homma, N., Okayama, S., Takahashi, H., Yoshida, I., Morishita, T., Tanaka, S., Haga, T., and Yamaya, K., Appl. Phys. Lett. 59, 1383 (1991).CrossRefGoogle Scholar
6. Luo, L., Wu, X.D., Dye, R.C., Muenchausen, R.E., Foltyn, S.R., Coulter, Y., Maggiore, C.J., and Inoue, T., Appl. Phys. LeUt. 59, 2043 (1991).CrossRefGoogle Scholar
7. Inam, A., Rogers, C.T., Ramesh, R., Remsching, K., Farrow, L., Hart, D., Venkatesan, T., and Wilkens, B., Appl. Phys. Lett. 57, 2484 (1990).Google Scholar
8. Hontsu, S., Mukai, N., Ishii, J., Kawai, T., and Kawai, S., Appl. Phys. Lett., 63, 1576 (1993).Google Scholar
9. Hontsu, S., Mukai, N., Ishii, J., Kawai, T., and Kawai, S., Appl. Phys. Lett., 61, 1134 (1992).CrossRefGoogle Scholar
10. Mukaida, M. and Miyazawa, S., Appl. Phys. Lett., 63, 999 (1993).CrossRefGoogle Scholar
11. Suzuki, Y., Lew, D., Marshall, A.F., Beasley, M.R., and Geballe, T.H., Phy. Rev. B, 48, 10642 (1993).Google Scholar