Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-24T11:32:26.015Z Has data issue: false hasContentIssue false

Epitaxial Growth of ZnO Thin Films on SiC Prepared by Chemical Solution Deposition

Published online by Cambridge University Press:  01 February 2011

Young-Sik Park
Affiliation:
parkys@kopti.re.kr, Korea Photonics Technology Institute, Camera Module Team, Gwangju 500-460, Korea, Republic of
Young-Sun Jeon
Affiliation:
own-young@hanmail.net, Korea Photonics Technology Institute, Camera Module Team, Gwangju, 500-460, Korea, Republic of
Kyung-Ok Jeon
Affiliation:
jjadeite@empal.com, Korea Photonics Technology Institute, Camera Module Team, Gwangju, 500-460, Korea, Republic of
Bo-An Kang
Affiliation:
bakang@nambu.ac.kr, Nambu University, Department of Applied Optics, 864-1 Wolgye-dong Gwangsan-gu, Gwangju, 506-824, Korea, Republic of
Kyu-Seog Hwang
Affiliation:
khwang@nambu.ac.kr, Nambu University, Department of Applied Optics, 864-1 Wolgye-dong Gwangsan-gu, Gwangju, 506-824, Korea, Republic of
Ju-Hyun Jeong
Affiliation:
jerngju@daum.net, Konyang University, Department of Ophthalmic Optics, Daejeon, 302-718, Korea, Republic of
Young-Hwan Lee
Affiliation:
y20whan@hanmail.net, Chunnam Techno College, Department of Automobile, Chonnam, 516-911, Korea, Republic of
Get access

Abstract

Zinc oxide (ZnO) thin films have emerged as one of the most promising oxide materials owing to their optical and electrical properties, together with their high chemical and mechanical stability. Chemical solution deposition (CSD) is attractive technique for obtaining ZnO thin films and has the advantages of easy control of the film composition and easy fabrication of a larger-area thin film at low cost. In this work, epitaxial ZnO thin films on SiC substrate were prepared by using a CSD method with a zinc naphthenate precursor. Precursor films were pyrolyzed at 500°C for 10 min in air and finally annealed at 600°C, 700°C, 800°C and 900°C for 30 min in air. Crystallinity and in-plane alignment of the films were investigated by X-ray diffraction theta-2 theta scan and pole-figure analysis. Scanning electron microscope, scanning probe microscope, and He-Cd laser (325 nm) are used to detect the surface morphology and photoluminescence of the films. The effects of annealing temperature on crystallinity and epitaxy of the films will be fully discussed on the basis of the results of X-ray diffraction analysis.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bian, J., Li, X., Chen, L. and Yao, Q., Chem. Phys. Lett. 393, 256 (2004).Google Scholar
2. Kim, I. W., Doh, S. J., Kim, C. C., Je, J. H., Tashiro, J. and Yoshimoto, M., Appl. Surf. Sci. 241, 179 (2005).Google Scholar
3. Park, W. I., An, S. J., Yi, G. C. and Jang, H. M., J. Mater. Res. 16, 1358 (2001).Google Scholar
4. Henley, S. J., Ashfold, M. N. R. and Cherns, D., Thin Solid Films 422, 69 (2002).Google Scholar
5. Kim, K. K., Song, J. H., Jung, H. J., Park, S. J., Song, J. H. and Lee, J. Y., J. Vac. Sic. Technol. A18, 2864 (2000).Google Scholar
6. Ashrafi, A. B. M. A., Zhang, B., Binh, N. T., Wakatsuki, K. and Segawa, Y., Jpn. J. Appl. Phys. 43, 1114 (2004).Google Scholar
7. Chen, Y., Hong, S. H., Ko, H. J., Nakajima, M., Yao, T. and Segawa, Y., Appl. Phys. Lett. 76, 245 (2000).Google Scholar
8. Hwang, K. S., Jeon, Y. S., Kang, B. A., An, J. H. and Kim, B. H., J. Ceram. Proc. Res. 5, 313 (2004).Google Scholar
9. Kim, B. H., An, J. H., Jeon, Y. S., Jeong, J. T., Kang, B. A. and Hwang, K. S., J. Mater. Sci. 40, 237 (2005).Google Scholar
10. Wessler, B., Lange, F. F. and Mader, W., J. Mater. Res. 17, 1644 (2002).Google Scholar
11. Hwang, K. S., Jeon, Y. S., Kang, B. A., Nishio, K., Tsuchiya, T., An, J. H. and Kim, B. H., J. Korean Phys. Soc. 46, 521 (2005).Google Scholar