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Epitaxial Growth of Thin Films of Ferroelectric Materials at Low Temperature by Excimer Laser Ablation Technique

Published online by Cambridge University Press:  25 February 2011

Hitoshi Tabata
Affiliation:
Tech. Inst. Kawasaki Heavy Ind. Ltd. 1–1 Kawasaki-cho Akashi 673, Japan
Tomoji Kawai
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, 8–1 Mihogaoka Ibaraki Osaka 567, Japan
Shichlo Kawal
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, 8–1 Mihogaoka Ibaraki Osaka 567, Japan
Osamu Murata
Affiliation:
Tech. Inst. Kawasaki Heavy Ind. Ltd. 1–1 Kawasaki-cho Akashi 673, Japan
Junzo Fujioka
Affiliation:
Tech. Inst. Kawasaki Heavy Ind. Ltd. 1–1 Kawasaki-cho Akashi 673, Japan
Shun-ichi Minakata
Affiliation:
Tech. Inst. Kawasaki Heavy Ind. Ltd. 1–1 Kawasaki-cho Akashi 673, Japan
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Abstract

We have formed PbTIO thin films on SrTiO3 substrate (100) at low temperature of 350°C using an ArF excimer laser ablation technique. Until now, the PbTiO3 films have not been formed at the temperature lower than 500°C using other thin film techniques. The Important points In the present study are the laser excitation of the substrate during the film growth and the lattice matching between the film and the substrate. The film deposited on the SrTiO3 substrate, shows preferential orientation of the c-axis perpendicular to the substrate surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

1. Iijima, K., Kawashima, S. and Ueda, I.: Proc. 6th In. meeting on Ferroelectricity, Kobe 1985, Jpn. J. Appl. Phys. 24, Suppl. 24-2, p.482 (1985).Google Scholar
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