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Epitaxial Growth and Magnetic Behavior of (Ni,Zn)Fe2O4 Thin Films on Si Substrate Using Designed Buffer Layers for Novel Memory Application

Published online by Cambridge University Press:  11 February 2011

Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152–8552, Japan
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152–8552, Japan
Nobuyasu Mizutani
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 O-okayama, Meguro-ku, Tokyo 152–8552, Japan
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Abstract

Epitaxial nickel zinc ferrite (Ni,Zn)Fe2O4 (NZF) thin films were successfully deposited on (MgO-Al2O3)/CeO2/YSZ/Si(001) substrates, where (MgO-Al2O3) is MgO doped with Al2O3. The crystallographic orientation and magnetic properties (saturation magnetization: Ms, and squareness: Mr/Ms where Mr is remanent magnetization) of NZF thin films were considerably changed with the amount of Al2O3 addition. If the amount of Al2O3 addition was less than 7 mol%, (001)-oriented epitaxial NZF thin films were obtained and the films had low squareness (around 45%). If the amount of Al2O3 addition was more than 7 mol%, (111)-oriented epitaxial NZF thin films were obtained and the films had high squareness (around 60–81%). Maximum squareness (81%) was obtained if the amount of Al2O3 addition was 26 mol%. For the sample with this Al2O3 content, the lattice mismatch between NZF and (MgO-Al2O3) buffer layer was 3.2%. The fact that high squareness was not obtained if lattice mismatch was very small (-0.3% on MgO) but obtained if lattice mismatch was 3.2% suggests that lattice mismatch to a certain content is important to avoid the formation of antiphase boundaries (APBs). This consideration was confirmed by examining other buffer layers having various lattice mismatches with NZF.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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Epitaxial Growth and Magnetic Behavior of (Ni,Zn)Fe2O4 Thin Films on Si Substrate Using Designed Buffer Layers for Novel Memory Application
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Epitaxial Growth and Magnetic Behavior of (Ni,Zn)Fe2O4 Thin Films on Si Substrate Using Designed Buffer Layers for Novel Memory Application
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