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Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

Published online by Cambridge University Press:  11 February 2011

T. Kimoto ,
K. Hashimoto ,
K. Fujihira ,
K. Danno ,
S. Nakamura ,
Y. Negoro  and
H. Matsunami
T. Kimoto
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Yoshidahonmachi, Sakyo, Kyoto 606–8501, Japan
K. Hashimoto
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Yoshidahonmachi, Sakyo, Kyoto 606–8501, Japan
K. Fujihira
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Yoshidahonmachi, Sakyo, Kyoto 606–8501, Japan
K. Danno
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Yoshidahonmachi, Sakyo, Kyoto 606–8501, Japan
S. Nakamura
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Yoshidahonmachi, Sakyo, Kyoto 606–8501, Japan
Y. Negoro
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Yoshidahonmachi, Sakyo, Kyoto 606–8501, Japan
H. Matsunami
Affiliation:
Department of Electronic Science and Engineering, Kyoto University Yoshidahonmachi, Sakyo, Kyoto 606–8501, Japan
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Abstract

Homoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K1.1
Copyright
Copyright © Materials Research Society 2003

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References

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