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Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

Published online by Cambridge University Press:  10 February 2011

M. Siegert
Affiliation:
Institut für Schicht- und Ionentechnik
Judit G. Lisoni
Affiliation:
Institut für Schicht- und Ionentechnik
C. H. Lei
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany, M.Siegert@fz-juelich.de
A. Eckau
Affiliation:
Institut für Schicht- und Ionentechnik
W. Zander
Affiliation:
Institut für Schicht- und Ionentechnik
C. L. Jia
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany, M.Siegert@fz-juelich.de
J. Schubert
Affiliation:
Institut für Schicht- und Ionentechnik
Ch. Buchal
Affiliation:
Institut für Schicht- und Ionentechnik
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Abstract

In the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

[1] Saenger, K.L.: Processing of Advanced Materials 2 (1993) 1 Google Scholar
[2] Gill, D.M., Block, B.A., Conrad, C.W., Wessels, B.W., Ho, S. T.: Appl. Phys. Lett. 69 (1996) 2968 Google Scholar
[3] Walker, F.J., McKee, R.A.: Appl. Phys. Lett. 65 (1994) 1495 Google Scholar
[4] McKee, R.A., Walker, F.J., Chisholm, M.F.: Phys. Rev. Lett. 81 (1998) 3014 Google Scholar
[5] Barrios, P., Kim, H.K.: Appl. Phys. Lett. 73 (1998) 1017 Google Scholar
[6] Beckers, L., Schubert, J., Ziesmann, J., Eckau, A., Leinenbach, P., Buchal, Ch.: J. Appl. Phys. 83 (1998) 3305 Google Scholar
[7] Zgonik, M., Bernasconi, P., Duelli, M., Schlesser, R., Giinter, P., Garrett, M.H., Rytz, D., Zhu, Y., Wu, X.: Phhys. Rev. B 50 (1994) 5941 Google Scholar
[8] Stritzker, B., Schubert, J., Poppe, U., Zander, W., Kriiger, U., Lubig, A., Buchal, Ch.: J. Less-Common Met. 164, 165 (1990) 279 Google Scholar
[9] Crystec GmbH, Köpenicker Str. 325, D-12555 Berlin, GermanyGoogle Scholar
[10] Lei, C.H., Jia, C.L., Siegert, M., Schubert, J., Buchal, Ch., Urban, K.: J. Crys. Growth 204 (1999) 137 Google Scholar
[11] Judit Lisoni, G., Siegert, M., Lei, C.H., Schubert, J., Zander, W., Buchal, Ch.: submitted to MRS Proc. Fall 1999 BostonGoogle Scholar
[12] Wessels, B.W.: J. Crys. Growth 195 (1998) 706 Google Scholar