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Enlargement of Grain Size and Location Control of Grain in Excimer-laser Crystallization of Si Film

Published online by Cambridge University Press:  01 February 2011

Wenchang Yeh ,
Dunyuan Ke  and
Chunjun Zhuang
Wenchang Yeh
Affiliation:
yeh@et.ntust.edu.tw, National Taiwan University of Science and Technology, Electronical Engineering, No.43, Sec.4, Keelung Rd, Taipei, Taipei, N/A, 106, Taiwan, +886-958-201245, +886-2-27376424
Dunyuan Ke
Affiliation:
sk700215@yahoo.com.tw, National Taiwan University of Science and Technology, Electronics, No.43, Sec.4, Keelung Rd., Taipei, N/A, 106, Taiwan
Chunjun Zhuang
Affiliation:
chunjun326@yahoo.com.tw, National Taiwan University of Science and Technology, Electronics, No.43, Sec.4, Keelung Rd., Taipei, N/A, 106, Taiwan
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Abstract

A technique for enlargement of grain size were shown and a technique for location controlled super lateral growth (SLG) grain in excimer laser annealing (ELA) were proposed and realized. In the technique for grain size enlargement, the grain size was enlarged to 10£gm that is more than 10 times larger than that in conventional method(~0.8£gm). The proposed sample structure was Si film/light absorptive film/Glass structure with applying the laser light from the back side of glass substrate. Time resolved(~1ns) optical measurement (TROM) revealed that the melt duration of Si film was increased to 800ns that is also 10 times longer than that in conventional method. As for the grain location control technique, a new method contains pre seeding process and post growth process were proposed and realized. In the pre seeding process, micro light beam(£g-light beam) was exposed to Si film to form a grain within the crystallized spot. £g-light beam was formed by micro-lens-array(MLA). After post growth process, single grain array with the diameters of 6£gm was formed in a period of 10£gm.

Keywords

polycrystallaser annealingSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A14-01
Copyright
Copyright © Materials Research Society 2006

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