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Enlargement of Crystal Grain Size and Significant Inclusion of Hexagonal Diamond Phase in Ultra Pure Microcrystalline Silicon

Published online by Cambridge University Press:  17 March 2011

Toshihiro Kamei
Toshihiro Kamei*
Affiliation:
Center for Integrated Systems, Department of Electrical Engineering, Stanford University, Stanford, CA 94305-4075, USA
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Abstract

We have shown significant effects of atmospheric impurities on crystal grain sizes of hydrogenated microcrystalline Si (μc-Si:H), the growth surface of which is totally covered by hydrogen. By reducing impurity concentrations, two growth modes emerge, bordered at 250°C. In particular, at higher temperature growth mode, strong (220) preferential growth takes place, resulting in increased grain size. Appearance of this growth mode seems to be related to surface monohydride. Sharp x-ray diffraction peak in lower angle than (111) is observed, which stems from (10-10) crystal plane of hexagonal diamond Si. Its formation is related to (220) oriented crystallites. Implication of these results is the possibility of Si polytype control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F13.5.1
Copyright
Copyright © Materials Research Society 2001

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