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Enhancing the Grain Size and {110} Texture of Polycrystalline Si Films By Seed Selection Through Ion Channeling: Implant-Dose Dependence

Published online by Cambridge University Press:  28 February 2011

Kenneth T-Y. Kung  and
Rafael Reif
Kenneth T-Y. Kung
Affiliation:
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139
Rafael Reif
Affiliation:
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

This work outlines an optimized seed selection through ion channeling (SSIC) process for enhancing the grain size and {110} texture of polycrystalline Si films grown by LPCVD on SiO2. These films, 0.44 μm thick, were self-implanted at normal incidence to various doses (1×1014 - 20×l014 cm-2) and then recrystallized at 600°C. An enhanced average grain diameter resulted after implantation and annealing, ranging from 0.10 to 2.0 μm (vs. the as-deposited 0.080 μm) and increasing with the implant dose. The grain size vs. implant dose behavior may be explained by a previously proposed stochastic model. An enhanced {110} texture was also observed after processing for implant doscs in the range 6×1014 - 14×1014 cm-2. The optimal dose was 11×1014 cm-2, for which the <110> directions were confined to within ±4° (vs. the as-deposited ±20°) of the surface normal. The overall results suggest a strong potential of SSIC in growing large-grain, restricted fibertextured polycrystalline Si thin films on amorphous insulators.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 163
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1.Reif, R. and Knott, J. E., Electron. Lett. 17, 586 (1981).Google Scholar
2.Kwizera, P. and Reif, R., Appl. Phys. Lett. 41, 379 (1982).Google Scholar
3.Kwizera, P. and Reif, R., Thin Solid Films 100, 227 (1983).Google Scholar
4.Iverson, R. B. and Reif, R., Mat. Res. Soc. Symp. Proc. 27, 543 (1984).Google Scholar
5.Iverson, R. B. and Reif, R., J. Appl. Phys. 57, 5169 (1985).Google Scholar
6.Kung, K. T-Y., Iverson, R. B., and Reif, R., Mat. Lett. 3, 24 (1984).Google Scholar
7.Kung, K. T-Y., Iverson, R. B., and Reif, R., Appl. Phys. Lett. 46, 683 (1985).Google Scholar
8.Brice, D. K., J. Appl. Phys. 46, 3385 (1975).Google Scholar
9.Gibbons, J. F., Proc. IEEE 60, 1062 (1972).Google Scholar
10.Narayan, J., Farhy, D., Oen, O. S., and Holland, O. W., J. Vac. Sci. Technol. A 2, 1303 (1984).Google Scholar
11.Feldman, L. C., Mayer, J. W., and Picraux, S. T., Materials Analysis by Ion Channeling: Submicron Crystallography (Academic Press, New York, 1982), pp. 16–17.Google Scholar