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Enhancement Mode GaN MOSFETs on Silicon Substrates with High Field-effect Mobility

Published online by Cambridge University Press:  01 February 2011

Hiroshi Kambayashi
Affiliation:
kambayashi.hiroshi@furukawa.co.jp, The Furukawa Electric Co.,LTD.,, Yokohama R&D laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan, +81-45-311-1218, +81-45-316-6374
Yuki Niiyama
Affiliation:
niiyama.yuki@furukawa.co.jp, The Furukawa Electric Co., LTD.,, Yokohama, 220-0073, Japan
Shinya Ootomo
Affiliation:
ootomo.shinya@furukawa.co.jp, The Furukawa Electric Co., LTD.,, Yokohama, 220-0073, Japan
Takehiko Nomura
Affiliation:
nomu3@yokoken.furukawa.co.jp, The Furukawa Electric Co., LTD.,, Yokohama,, 220-0073, Japan
Masayuki Iwami
Affiliation:
kambayashi.hiroshi@furukawa.co.jp, The Furukawa Electric Co., LTD.,, Yokohama, 220-0073, Japan
Yoshihiro Satoh
Affiliation:
kambayashi.hiroshi@furukawa.co.jp, The Furukawa Electric Co., LTD.,, Yokohama, 220-0073, Japan
Sadahiro Kato
Affiliation:
kambayashi.hiroshi@furukawa.co.jp, The Furukawa Electric Co., LTD.,, Yokohama, 220-0073, Japan
Seikoh Yoshida
Affiliation:
kambayashi.hiroshi@furukawa.co.jp, The Furukawa Electric Co., LTD.,, Yokohama, 220-0073, Japan
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Abstract

In this report, we have demonstrated enhancement-mode n-channel GaN MOSFETs on silicon (111) substrates. We observe a high field-effect mobility of 115 cm2/Vs, the best report for GaN MOSFET fabricated on a silicon substrate to our knowledge. The threshold voltage was estimated to be +2.7 V, and the maximum operation current was over 3.5 A. This value is the largest which have ever been reports.

Keywords

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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