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Engineering ZnO/GaN Interfaces for Tunneling Ohmic Contacts to GaN

Published online by Cambridge University Press:  11 February 2011

E. Kaminska
Affiliation:
Institute of Electron Technology, Warsaw, Poland, Institute of Physics
A. Piotrowska
Affiliation:
Institute of Electron Technology, Warsaw, Poland, Institute of Physics
K. Golaszewska
Affiliation:
Institute of Electron Technology, Warsaw, Poland, Institute of Physics
R. Kruszka
Affiliation:
Institute of Electron Technology, Warsaw, Poland, Institute of Physics
A. Kuchuk
Affiliation:
Institute of Electron Technology, Warsaw, Poland, Institute of Physics
J. Szade
Affiliation:
University of Silesia, Katowice, Poland
A. Winiarski
Affiliation:
University of Silesia, Katowice, Poland
A. Barcz
Affiliation:
Institute of Electron Technology, Warsaw, Poland, Institute of Physics Institute of Physics, PAS, Warsaw, Poland
J. Jasinski
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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Abstract

We have investigated two approaches for the fabrication of thin ZnO films: sputter deposition from the ZnO target and thermal oxidation of vacuum deposited Zn. The microstructure and electronic properties after consecutive steps of the formation of n-ZnO/p-GaN contacts have been studied using electron transmission microscopy and x-ray photoelectron spectrometry. We have achieved ohmic contacts by Zn oxidation and explain their ohmic behaviour in terms of a tunnel n+-ZnO - p-GaN junction.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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