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Endor Spectroscopy on Deep Level Defects in Gaas

Published online by Cambridge University Press:  26 February 2011

J.-M. Spaeth ,
A. Gorger ,
D. M. Hofmann  and
B. K. Meyer
J.-M. Spaeth
Affiliation:
University of Paderborn, FB 6, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
A. Gorger
Affiliation:
University of Paderborn, FB 6, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
D. M. Hofmann
Affiliation:
University of Paderborn, FB 6, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
B. K. Meyer
Affiliation:
University of Paderborn, FB 6, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
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Abstract

With optically detected electron spin resonance (ODESR) and electron nuclear double resonance (ODENDOR) the following deep level defects in s.i. LEC-grown GaAs were investigated: EL2 defects in undoped GaAs and VGa2+ and VGa3+ defects in V-doped GaAs. This paper summarizes the major results: (i) the double donor defect EL2 in an (AsGa-Asi+) pair defect, which is distributed rather homogeneously across an as-grown wafer. After inverted thermal conversion treatment it is destroyed, and 3 new paramagnetic defects appear. EL2 is recovered after annealing at ca. 800 °C, while the 3 new defects disappear. (ii) A new ESR spectrum due to VGa2+ was measured. It is shown for the first time for a 3dn impurity in semiconductors that VGa3+(3d3)is in a low spin state (S = 1/2) in accordance with recent theoretical predictions. A deep level defect at Ev + (0.2–0.4) eV is discovered, which is probably the defect needed for explaining the s.i. properties of V-doped GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 363
Copyright
Copyright © Materials Research Society 1988

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References

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