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Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field

Published online by Cambridge University Press:  03 September 2012

A. Kinoshita ,
H. Hirayama ,
P. Riblet ,
M. Ainoya ,
A. Hirata  and
Y. Aoyagi
A. Kinoshita
Affiliation:
The Institute of Physicaland Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan Department of Chemical Engineering, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo, 169-8555, Japan
H. Hirayama
Affiliation:
The Institute of Physicaland Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan
P. Riblet
Affiliation:
The Institute of Physicaland Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan
M. Ainoya
Affiliation:
The Institute of Physicaland Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan Department of Chemical Engineering, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo, 169-8555, Japan
A. Hirata
Affiliation:
Department of Chemical Engineering, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo, 169-8555, Japan
Y. Aoyagi
Affiliation:
The Institute of Physicaland Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan
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Abstract

Photoluminescence (PL) enhancement due to the screening of piezoelectric field induced by Si-doping is systematically studied in GaN/AlGaN quantum wells (QWs) fabricated by metal organic vapor-phase-epitaxy (MOVPE). The PL enhancement ratio of QWs for Si-doped directly into the wells was much larger than that for doped only into the barrier layers. This result shows that the crystal quality of the quantum well is not so damaged by heavy Si-doping, which is different from the cases of GaAs or InP material systems. The PL intensity enhancement ratio was especially large for thick wells. The typical value of the enhancement ratio was 30 times for a 5 nm-thick single QW. The optimum Si-doping concentration was approximately 4×1018 cm-3. From the well width dependence of the PL enhancement ratio and PL peak shift under high excitation conditions, we determined that the dominant effect inducing the PL enhancement is screening of piezoelectric field in the QWs. These results indicate that Si-doping is very effective for the application of GaN/AlGaN QWs to optical devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.32
Copyright
Copyright © Materials Research Society 1999

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References

1. Nakamura, S. and Fasol, G., The Blue Laser Diode (Springer, Berlin, 1997).Google Scholar
2. Han, J., Crawford, M. H., Shul, R. J., Figiel, J. J., Banas, M., Zhang, L., Song, Y. K., Zhou, H. and Nurmikko, A. V., Appl. Phys. Lett. 73, 1688, (1998).Google Scholar
3. Ogita, T., Hatta, H., Nishimoto, S. and Kagiya, T., J. Jpn. Chem. Eng. Soc. 5, 970 (1985)Google Scholar
4. Kozodoy, P., Hansen, M., DenBaars, S. P. and Mishra, U. K., Appl. Phys. Lett. 74, 3681, (1999).Google Scholar
5. Mukai, T., Narimatsu, H. and Nakamura, S., J. Cryst. Growth 189/190, 778, (1998).Google Scholar
6. Shen, X. Q. and Aoyagi, Y., Jpn. J. Appl. Phys. 38, L 14 (1999).Google Scholar
7. , Han and Crawford, M. H., Extended Abstracts of the 1999 Int. Conf. on Solid. State Devices and Materials, Tokyo, 1999 (The Japan Society of Applied Physics, Tokyo, 1999) pp. 46.Google Scholar
8. Chichibu, S., Cohen, D. A., Mack, M. P., Abare, A. C., Kozodoy, P., Minsky, M., Fleischer, S., Keller, S., Bowers, J. E., Mishra, U. K., Coldren, L. A., Clarke, D. R. and DenBaars, S. P., Appl. Phys. Lett. 73, 496, (1998).Google Scholar
9. Schubert, E. F., Goepfert, I. D., Grieshaber, W. and Redwing, J. M., Appl. Phys. Lett. 71, 921, (1997).Google Scholar
10. Lee, I. H., Choi, I. H., Lee, C. R. and Noh, S. K., Appl. Phys. Lett. 71, 1359, (1997).Google Scholar
11. Ruvimov, S., Weber, Z. L., Suski, T., Ager, J. W. III, Washbum, J., Krueger, J., Kisielowski, C., Weber, E. R., Amano, H. and Akasaki, I., Appl. Phys. Lett. 69, 990, (1996).Google Scholar
12. Cho, Y. H., Song, J. J., Keller, S., Minsky, M. S., Hu, E., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 73, 1128, (1998).Google Scholar