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Electronic Structures of P-Type Doped CuInS2

Published online by Cambridge University Press:  10 February 2011

T. Yamamoto
Affiliation:
Department of Condensed Matter Physics, Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki 567, Japan, tetsu36@sanken.osaka-u.ac.jp Department of Computational Science, Asahi Chemical Industry Co., Ltd., 2-I Samejima, Fuji 416, Japan
H. Katayama-Yoshida
Affiliation:
Department of Condensed Matter Physics, Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki 567, Japan, tetsu36@sanken.osaka-u.ac.jp
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Abstract

We have studied the electronic structures of CuIn(S0.875X0.125)2 (X=B, C, N, Si or P) based on the ab-initio electronic band structure calculations using the augmented spherical wave (ASW) method. We have clarified that the physical characteristics of the p-type doped CuInS2 crystals are mainly determined by a change in the strength of interactions between Cu and S atoms. On the basis of the calculated results, we discussed the material design considerations, such as controlling the strength of resistivity for p-type doped CulnS2 materials and converting the conduction type, from n-type to p-type by a codoping method.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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