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Electronic Structure and Gate Capacitance-Voltage Characteristics of MBE Silicon δ-FETs

Published online by Cambridge University Press:  03 September 2012

J. E. Manzoli  and
O. Hipólito
J. E. Manzoli
Affiliation:
Ciência e Engenharia de Materiais - Universidade de São Paulo (USP), CX 369, ZIP-13560-970, São Carlos, SP, Brazil, manzoli@ifqsc.sc.usp.br
O. Hipólito
Affiliation:
Universidade de Mogi das Cruzes, Departamento do Nficleo de Pesquisas Tecnológicas, Mogi das Cruzes, SP, Brazil
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Abstract

New implementations in MBE growth techniques allow high accuracy in δ-doping profiles in Silicon crystals. In this work we present a self-consistent numerical calculations of the electronic structure of δ-FETs, field effect transistors where electric transport channel is a quasi-two-dimensional plan of Antimonide doping in a Silicon crystal. We made the calculations to the heavy and light electrons at 77 and 300K varying the gate voltage in devices with one to three coupled deltas. We obtain the effective potential, the sub-bands and respective electronic densities, basic calculations to point at optimization of the device. We made considerations on theirs DC - capacitances and free electron density spreadings to achieve the gate-voltage best performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 107
Copyright
Copyright © Materials Research Society 1997

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