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Electronic Excitation-Induced Surface Chemistry and Electron-Beam-Assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

F. Bozso  and
Ph. Avouris
F. Bozso
Affiliation:
IBM Research Division, T. J. Watson Research Center P.0. Box 218, Yorktown Heights, N.Y. 10598
Ph. Avouris
Affiliation:
IBM Research Division, T. J. Watson Research Center P.0. Box 218, Yorktown Heights, N.Y. 10598
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Abstract

Selective area deposition of thin films and surface structures with precise control over their composition is possible in UHV by using low energy electron beams to induce electronic excitations in adsorbed molecular layers. Upon electron impact, adsorbed/co-adsorbed molecules decompose into reactive species, resulting in film growth. The composition of the film reflects that of the adsorbed molecular layer, which at cryogenic temperatures can sensitively be controlled by the partial pressure of the reactant gases. We present results of detailed studies of adsorption, thermal and electron-beam-induced dissociation of disilane and ammonia on silicon. We show that by proper choice of temperature, gas phase composition and electron beam, amorphous silicon, silicon nitride, oxide, silicon oxinitride films can be grown with nearly monolayer thickness resolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 201
Copyright
Copyright © Materials Research Society 1990

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References

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