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Electron and Photon Irradiation Effects in Metal/Amorphous Chalcogenide Bilayers

Published online by Cambridge University Press:  25 February 2011

Andreas Ploessl ,
B.J. Dhanjal ,
A.G. Fitzgerald ,
R.A.G. Gibson  and
A.D. Gillies
Andreas Ploessl
Affiliation:
Department of Applied Physics and Electronic & Mechanical Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, UK
B.J. Dhanjal
Affiliation:
Department of Applied Physics and Electronic & Mechanical Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, UK
A.G. Fitzgerald
Affiliation:
Department of Applied Physics and Electronic & Mechanical Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, UK
R.A.G. Gibson
Affiliation:
Department of Applied Physics and Electronic & Mechanical Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, UK
A.D. Gillies
Affiliation:
Department of Applied Physics and Electronic & Mechanical Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, UK
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Abstract

Thin film bilayers of metal and amorphous chalcogenides have been prepared by evaporation. The metals were silver and zinc, while the chalcogenides were P2Se3 and arsenic sulphides, mainly As2S3. The metals dissolved into the chalcogenide films when illuminated with ultraviolet light or when irradiated with an electron beam. The changes in composition and chemical bonding which were caused by this irradiation, were investigated by x-ray photoelectron spectroscopy. The concomitant structural changes have been investigated by electron diffraction.

After the metal and chalcogenide had intermixed, either due to photon or electron irradiation, the layers became sensitive to an electron beam; this sensitivity depended on the composition of the chalcogenide. Energy-dispersive x-ray microanalysis showed that the electron beam rapidly, but reversibly, depleted the irradiated areas of the dissolved metal. Very fine patterns, of better than half-micron resolution, could be written. By exposing a pure arsenic sulphide film through a shadow mask to ultraviolet light, zinc could be deposited selectively to form fine patterns. Plasma processing developed either kind of pattern reliably, thus rendering the material a dry inorganic resist for photo- and electron-beam-lithography with potential benefits in particular for GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 595
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Kolobov, A. V. and Elliott, S. R., Adv. Phys. 40(5), 625 (1991).Google Scholar
2 Kolobov, A. V., J. Non-Cryst. Solids 164–166, 1159 (1993).Google Scholar
3 Myklebust, R. L., Fiori, C. E., and Heinrich, K. F. J., NBS Technical Note, 1106 (1979).Google Scholar
4 Moir, P. A., Fitzgerald, A. G., and Storey, B. E., Surface and Interface Analysis 14, 295 (1989).Google Scholar
5 Wagner, C. D., in Practical Surface Analysis, 2nd ed., edited by Briggs, D. and Seah, M. P. (John Wiley & Sons, Chichester, 1990), Vol. 1, p. 595.Google Scholar
6 Wagner, C D. and Joshi, A., J. Electron Spectrosc. Relat. Phenom. 47, 283 (1988).CrossRefGoogle Scholar
7 Fitzgerald, A. G., Thin Solid Films 98, 101 (1982).Google Scholar
8 Elliott, S. R., J. Non-Cryst. Solids 130, 85 (1991).Google Scholar
9 McHardy, C. P., Fitzgerald, A. G., Moir, P. A. and Flynn, M., J. Phys. C: Solid State Phys. 20 (1987)4055 Google Scholar
10 Bennet, j. and Dagata, J. A., J. Vac. Sci. Technol. A 11(5), 2597 (1993).Google Scholar
11 Kolobov, A. V., Elliott, S. R., and Steel, A. T., Phys. Rev. B 41(14), 9913 (1990).Google Scholar