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Electrical Study of Ferromagnet Metal Gate MOS Diode: Towards a Magnetic Memory Cell Integrated on Silicon

Published online by Cambridge University Press:  01 February 2011

Mehdi Kanoun
Affiliation:
mehdi.kanoun@cea.fr, CEA, SPINTEC, 17 rue des Martyrs, GRENOBLE Cedex 9, Grenoble, 38054, France
Rabia Benabderrahmane
Affiliation:
rabia.enabderrahmane@cea.fr, CEA/SPINTEC, 17 rue des Martyrs, Grenoble, 38054, France
Christophe Duluard
Affiliation:
christophe.duluard@gmail.com, CEA/SPINTEC, 17 rue des Martyrs, Grenoble, 38054, France
Claire Baraduc
Affiliation:
claire.baraduc@cea.fr, CEA/SPINTEC, 17 rue des Martyrs, Grenoble, 38054, France
Nicolas Bruyant
Affiliation:
nicolas.bruyant@cea.fr, CEA/SPINTEC, 17 rue des Martyrs, Grenoble, 38054, France
Hérvé Achard
Affiliation:
herve.achard@cea.fr, CEA/lETI, 17 rue des Martyrs, Grenoble, 38054, France
Ahmad Bsiesy
Affiliation:
ahmad.bsiesy@cea.fr, CEA/SPINTEC, 17 rue des Martyrs, Grenoble, 38054, France
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Abstract

This work focuses on electrical characterisation of NiFe/SiO2/Si diodes that can be used as spin injection into silicon for future spintronic devices. Capacitance-voltage characteristics show a large increase of the Si/SiO2 interfacial state density compared to Al/SiO2/Si diodes. This result suggests that nickel and/or iron may have diffused across the SiO2 layer. Consistently the current-voltage experimental characteristics can be accounted for by using trap assisted electron transport mechanism. These traps may be attributed to ferromagnet atoms in the oxide bulk.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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Electrical Study of Ferromagnet Metal Gate MOS Diode: Towards a Magnetic Memory Cell Integrated on Silicon
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