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The Electrical Properties of Polyoxide Depending on the Polycrystalline-Si Formation Conditions

Published online by Cambridge University Press:  21 February 2011

Kyoung-Soo Yi
Affiliation:
IC DEVELOPMENT DEPT., ETRI, P.O.BOX 8, DAEDOG-DANJI, DAEJEON 305-606, KOREA
Deok-Ho Cho
Affiliation:
IC DEVELOPMENT DEPT., ETRI, P.O.BOX 8, DAEDOG-DANJI, DAEJEON 305-606, KOREA
Jeong Yong Lee
Affiliation:
DEPT. OF MATERIALS SCIENCE AND ENGINEERING, KAIST, DAEJEON 305-701, KOREA
Kee-Soo Nam
Affiliation:
IC DEVELOPMENT DEPT., ETRI, P.O.BOX 8, DAEDOG-DANJI, DAEJEON 305-606, KOREA
Sang-Won Kang
Affiliation:
IC DEVELOPMENT DEPT., ETRI, P.O.BOX 8, DAEDOG-DANJI, DAEJEON 305-606, KOREA
Jin-Hyo Lee
Affiliation:
IC DEVELOPMENT DEPT., ETRI, P.O.BOX 8, DAEDOG-DANJI, DAEJEON 305-606, KOREA
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Abstract

Prior to growth of polyoxide, amorphous-Si with a cap of low temperature oxide was annealed to improve the dielectric property of polyoxide. Current-electric field, critical electric field, critical electric field histogram, and Fowler-Nordheim conduction plot were evaluated. The interface of polyoxide and poly-Si was observed with a transmission electron microscope. The annealing of the amorphous-Si prior to oxidation was effective to improve the dielectric property of the polyoxide.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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