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Electrical Properties of Diamond MISFETs with Submicron-Sized Gate on Boron-Doped (111) Surface

Published online by Cambridge University Press:  01 February 2011

Takeyasu Saito
Affiliation:
tk-saito@aist.go.jp, National Institute of Advanced Industrial Science and Technology, AIST TC2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Kyung-ho Park
Affiliation:
kh-park@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Japan
Kazuyuki Hirama
Affiliation:
hirama@kaw.comm.waseda.ac.jp, Waseda University, Japan
Hitoshi Umezawa
Affiliation:
hitoshi.umezawa@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Japan
Mitsuya Satoh
Affiliation:
satoh.mitsuya@kaw.comm.waseda.ac.jp, Waseda University, Japan
Hiroshi Kawarada
Affiliation:
kawarada@waseda.jp, Waseda University, Japan
Zhi-Quan Liu
Affiliation:
LIU.Zhiquan@nims.go.jp, National Institute for Materials Science, Japan
Kazutaka Mitsuishi
Affiliation:
MITSUISHI.Kazutaka@nims.go.jp, National Institute for Materials Science, Japan
Hideyo Okushi
Affiliation:
h.okushi@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Japan
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Abstract

An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, Idmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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Electrical Properties of Diamond MISFETs with Submicron-Sized Gate on Boron-Doped (111) Surface
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