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Electrical Properties of Cubic InN and GaN Epitaxial Layers as a Function of Temperature

Published online by Cambridge University Press:  03 September 2012

J.R.L. Fernandez ,
V.A. Chitta ,
E. Abramof ,
A. Ferreira da Silva ,
J.R. Leite ,
A. Tabata ,
D.J. As ,
T. Frey ,
D. Schikora  and
K. Lischka
J.R.L. Fernandez
Affiliation:
Instituto de Física da USP, C.P. 66318, 05315-970 São Paulo, SP, Brazil, rafael@macbeth.if.usp.br
V.A. Chitta
Affiliation:
Universidade São Francisco, Centro de Ciências Exatas e Tecnológicas, 13251-900 Itatiba, SP, Brazil
E. Abramof
Affiliation:
Instituto Nacional de Pesquisas Espaciais (INPE-LAS), C.P. 515, 12201-970 Säo José do Campos, SP, Brazil
A. Ferreira da Silva
Affiliation:
Instituto Nacional de Pesquisas Espaciais (INPE-LAS), C.P. 515, 12201-970 Säo José do Campos, SP, Brazil
J.R. Leite
Affiliation:
Instituto de Física da USP, C.P. 66318, 05315-970 São Paulo, SP, Brazil, rafael@macbeth.if.usp.br
A. Tabata
Affiliation:
Instituto de Física da USP, C.P. 66318, 05315-970 São Paulo, SP, Brazil, rafael@macbeth.if.usp.br
D.J. As
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100, D-33095 Paderborn, Germany
T. Frey
Affiliation:
Cite this article as: MRS internet J. Nitride Semicond. Res. 595, W3-40 (2000)
D. Schikora
Affiliation:
Cite this article as: MRS internet J. Nitride Semicond. Res. 595, W3-40 (2000)
K. Lischka
Affiliation:
Cite this article as: MRS internet J. Nitride Semicond. Res. 595, W3-40 (2000)
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Abstract

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.40
Copyright
Copyright © Materials Research Society 1999

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