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Electrical, Optical, and Structural Properties of Fluorine-Doped CdO

Published online by Cambridge University Press:  21 March 2011

Teresa M. Barnes ,
Xiaonan Li ,
Clay Dehart ,
Helio Moutinho ,
Sally Asher ,
Yanfa Yan  and
Timothy A. Gessert
Teresa M. Barnes
Affiliation:
Dept. Of Chemical Engineering, Colorado School of Mines, Golden, CO 80401, USA
Xiaonan Li
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Clay Dehart
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Helio Moutinho
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Sally Asher
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Yanfa Yan
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Timothy A. Gessert
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
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Abstract

We have investigated the effects of fluorine doping and deposition temperature on CdO grown by metal-organic chemical vapor deposition (MOCVD). Fluorine doping increases the carrier concentration of the films by about one order of magnitude at a deposition temperature of 300°C. The increased carrier concentration increases the optical bandgap from 2.4 eV to 2.85 eV. On the other hand, the higher deposition temperatures enabled by fluorine doping improve the crystal structure of the films. Therefore a higher mobility has been reached. The polycrystalline thin film CdO deposited at 450°C has the Hall mobility of 262 cm2/V-s and a carrier concentration of 3.8×1019/cm3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F1.8
Copyright
Copyright © Materials Research Society 2001

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References

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