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Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

M. Ahoujja ,
S. Elhamri ,
R. Berney ,
Y.K. Yeo  and
R. L. Hengehold
M. Ahoujja
Affiliation:
Department of Physics, University of Dayton, Dayton, OH, USA
S. Elhamri
Affiliation:
Department of Physics, University of Dayton, Dayton, OH, USA
R. Berney
Affiliation:
Department of Physics, University of Dayton, Dayton, OH, USA
Y.K. Yeo
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH, USA
R. L. Hengehold
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH, USA
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Abstract

Electrical properties of As, Si, and [As+Si] doped GaN films grown on sapphire substrates by low temperature metalorganic chemical vapor deposition have been investigated using temperature dependent Hall-effect and deep level transient spectroscopy measurements. The Hall measurements from the GaN layers show that the concentration decreases with arsine flow (4, 40, and 400 sccm) at all temperatures. The carrier concentration of the Si-doped GaN, on the other hand, increases with the incorporation of arsine flow. This behavior is attributed to the formation of AsGa antisites which act as double donors. A deep level at around 0.82 eV below the conduction in the band gap of As doped GaN is measured by DLTS and is tentatively assigned to arsenic on gallium antisite.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.19
Copyright
Copyright © Materials Research Society 2005

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References

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