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Electric Field Dependence of the Electron Drift Velocity in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

R. I. Devlen
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
E. A. Schiff
Department of Physics, Syracuse University, Syracuse, NY 13244
J. Tauc
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
S. Guha
Energy Conversion Devices Inc., 1675 W. Maple Road, Troy, MI 48084
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We present room temperature measurements on the electron drift velocity in hydrogenated amorphous silicon (a-Si:H) for large electric fields (1.3 × 105 to 3 × 105 cm/s). The experimental time resolution was ˜ 1ps and velocities as high as 8 × 105 cm/s were observed. The electron transport was non-dispersive, and the velocity was found to be a superlinear function of the applied field.

Research Article
Copyright © Materials Research Society 1989

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