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Elaboration and Light Emission Properties of Low Doped p-Type Porous Silicon Microcavities

Published online by Cambridge University Press:  15 February 2011

G. Lérondel ,
P. Ferrand  and
R. Romestain
G. Lérondel
Affiliation:
Laboratoire de Spectrométrie Physique (UMR 5588), BP 87, 38402 Saint Martin d'Hères Cedex, FranceGilles.LERONDEL@ujf-grenoble.fr
P. Ferrand
Affiliation:
Laboratoire de Spectrométrie Physique (UMR 5588), BP 87, 38402 Saint Martin d'Hères Cedex, FranceGilles.LERONDEL@ujf-grenoble.fr
R. Romestain
Affiliation:
Laboratoire de Spectrométrie Physique (UMR 5588), BP 87, 38402 Saint Martin d'Hères Cedex, FranceGilles.LERONDEL@ujf-grenoble.fr
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Abstract

We account for the elaboration of Bragg reflectors and microcavities based on efficiently luminescent porous silicon. A characterisation of very thin porous silicon layers obtained with current densities of formation varying from 1.5 mA to 300 mA is presented. The resulting refractive index variation (typically from 1.37 to 1.86 at 700 nm) enables the elaboration of high quality Bragg reflectors and Fabry-Perot filters from the yellow to the near infrared. Although low doped p-type porous silicon develops rougher interfaces than highly doped p-type porous silicon, its better luminescence efficiency has enabled us to elaborate microcavities with a strong emission in a narrow band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 711
Copyright
Copyright © Materials Research Society 1997

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References

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