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Effects of the Substrate Pretreatments on the Leakage Current in the Low-Temperature Poly-Si TFTs

Published online by Cambridge University Press:  03 September 2012

Tae-Kyung Kim
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, Korea
Byung-Il Lee
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, Korea
Tae-Hyung Ihn
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, Korea
Seung-Ki Joo
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, Korea
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Abstract

Poly-Si TFT’s were fabricated on the glass substrate by the Metal Induced Lateral Crystallization(MILC). Before deposition of the active a-Si thin films(1000 Å), the glass substrate was pretreated in three different ways such as oxidation of a-Si(100 Å), oxide buffer layer deposition(1000 Å), and ion mass doping of the glass substrates. The leakage current at reverse bias could be reduced by one order of magnitude by the substrate pretreatment. Field effect mobility of n-channel TFT’s was 108cm2/Vsec, subthreshold slope and on/off current ratio were 0.7 V/dec. and about 106, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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